Infineon
IRF6614
Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3
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Technical Specifications
Infineon IRF6614 technical specifications.
General
Number of Terminals
3
Terminal Position
BOTTOM
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF6614 Datasheet
Download the complete datasheet for Infineon IRF6614 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.