Infineon
IRF6614PBF
Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, ISOMETRIC-3
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Technical Specifications
Infineon IRF6614PBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF6614PBF Datasheet
Download the complete datasheet for Infineon IRF6614PBF to view detailed technical specifications.
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