Infineon
IRF6616PBF
Power Field-Effect Transistor, 19A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
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Technical Specifications
Infineon IRF6616PBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF6616PBF Datasheet
Download the complete datasheet for Infineon IRF6616PBF to view detailed technical specifications.
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