N-Channel Power MOSFET featuring 100V drain-source voltage and 10.3A continuous drain current. This single-element silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.013 ohms. Designed for high-performance applications, it operates across a wide temperature range from -40°C to 150°C. The component has three terminals with bottom terminal positioning, adhering to ROHS compliance.
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Technical Specifications
Infineon IRF6644TRPBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Min Operating Temperature
-40
Terminal Position
BOTTOM
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF6644TRPBF Datasheet
Download the complete datasheet for Infineon IRF6644TRPBF to view detailed technical specifications.
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