N-Channel Power MOSFET featuring 100V drain-source voltage and 10.3A continuous drain current. This single-element silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.013 ohms. Designed for high-performance applications, it operates across a wide temperature range from -40°C to 150°C. The component has three terminals with bottom terminal positioning, adhering to ROHS compliance.
Quick Jump:
Technical Specifications
Infineon IRF6644TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Min Operating Temperature | -40 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF6644TRPBF Datasheet
Download the complete datasheet for Infineon IRF6644TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.