Infineon
IRF6645
Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
Quick Jump:
Technical Specifications
Infineon IRF6645 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
BOTTOM
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF6645 Datasheet
Download the complete datasheet for Infineon IRF6645 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.