N-Channel Power MOSFET featuring 100V drain-source voltage and 5.7A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.035 ohms. Designed with a single element and three terminals positioned at the bottom, it operates up to a maximum temperature of 150°C. The component is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Infineon IRF6645TRPBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
BOTTOM
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF6645TRPBF Datasheet
Download the complete datasheet for Infineon IRF6645TRPBF to view detailed technical specifications.
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