N-Channel Power MOSFET featuring a low on-resistance of 0.011 ohms and a continuous drain current capability of 13.4A. This single-element silicon device operates up to a maximum of 150°C and supports a drain-source voltage of 60V. Designed with three bottom-positioned terminals, this Metal-Oxide Semiconductor Field-Effect Transistor is ROHS compliant.
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Technical Specifications
Infineon IRF6674TRPBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
3
Terminal Position
BOTTOM
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF6674TRPBF Datasheet
Download the complete datasheet for Infineon IRF6674TRPBF to view detailed technical specifications.
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