N-Channel Power MOSFET featuring a low on-resistance of 0.011 ohms and a continuous drain current capability of 13.4A. This single-element silicon device operates up to a maximum of 150°C and supports a drain-source voltage of 60V. Designed with three bottom-positioned terminals, this Metal-Oxide Semiconductor Field-Effect Transistor is ROHS compliant.
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Technical Specifications
Infineon IRF6674TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF6674TRPBF Datasheet
Download the complete datasheet for Infineon IRF6674TRPBF to view detailed technical specifications.
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