Dual-element, N-channel and P-channel MOSFET for power applications. Features a continuous drain current of 4A, a drain-source voltage of 30V, and a low on-resistance of 0.05 ohms. This silicon Metal-Oxide Semiconductor FET is housed in an 8-terminal SOP-8 package (JEDEC MS-012AA) and operates up to a maximum temperature of 150°C.
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Technical Specifications
Infineon IRF7309TRPBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
8
Terminal Position
DUAL
JEDEC Package Code
MS-012AA
Number of Elements
2
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF7309TRPBF Datasheet
Download the complete datasheet for Infineon IRF7309TRPBF to view detailed technical specifications.
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