Dual P-channel MOSFET featuring 20V drain-source voltage and 5.3A continuous drain current. Offers a low on-resistance of 0.058 ohms. This silicon Metal-oxide Semiconductor FET utilizes a 2-element configuration within an 8-terminal MS-012AA package. Designed with a lead-free package.
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Technical Specifications
Infineon IRF7314TRPBF technical specifications.
General
Number of Terminals
8
Terminal Position
DUAL
JEDEC Package Code
MS-012AA
Number of Elements
2
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF7314TRPBF Datasheet
Download the complete datasheet for Infineon IRF7314TRPBF to view detailed technical specifications.
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