IRF7379PBF

Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8

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Infineon IRF7379PBF technical specifications.

Number of Terminals

Min Operating Temperature

-55

Terminal Position

DUAL

JEDEC Package Code

MS-012AA

Number of Elements

RoHS

Yes

Eccn Code

EAR99

REACH

Compliant

Military Spec

False

This datasheet cannot be embedded due to technical restrictions.