
N-Channel Power MOSFET, 20V drain-source voltage, 5.4A continuous drain current, and 0.03 ohm on-resistance. Features a 2-element silicon metal-oxide semiconductor field-effect transistor construction. This component is housed in a MICRO-8 package with 8 terminals arranged in a dual configuration.
Infineon IRF7530TRPBF technical specifications.
| Number of Terminals | 8 |
| Terminal Position | DUAL |
| Number of Elements | 2 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
Download the complete datasheet for Infineon IRF7530TRPBF to view detailed technical specifications.
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