N-channel enhancement mode power MOSFET featuring a 40V drain-source voltage and 46A continuous drain current. This surface-mount component utilizes DirectFET technology with a 15-pin, lead-frame SMT package measuring 7.1mm x 9.15mm x 0.49mm. Key electrical characteristics include a maximum drain-source on-resistance of 1mΩ at 10V, typical gate charge of 220nC at 10V, and typical input capacitance of 11880pF at 25V. Operating temperature range spans from -55°C to 175°C, with a maximum power dissipation of 3800mW.
PackageDirect-FET L8
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon IRF7739L2TR1PbF technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
Direct-FET L8
Package Description
Metal Can Direct FET Package
Lead Shape
No Lead
Pin Count
15
PCB
15
Package Length (mm)
7.1(Max)
Package Width (mm)
9.15(Max)
Package Height (mm)
0.49(Max)
Seated Plane Height (mm)
0.74(Max)
Package Material
Copper
Mounting
Surface Mount
Configuration
Single Hex Drain Octal Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
DirectFET
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
46A
Material
Si
Maximum Drain Source Resistance
1@10VmOhm
Typical Gate Charge @ Vgs
220@10VnC
Typical Gate Charge @ 10V
220nC
Typical Input Capacitance @ Vds
11880@25VpF
Maximum Power Dissipation
3800mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Infineon IRF7739L2TR1PbF Datasheet
Download the complete datasheet for Infineon IRF7739L2TR1PbF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.