N-Channel Power MOSFET featuring 75V drain-source voltage and 26A continuous drain current. This single-element silicon Metal-Oxide-Semiconductor FET offers a low on-resistance of 0.0023 ohms. Designed for high-temperature operation up to 175°C, it includes 9 terminals with bottom positioning. The component is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Infineon IRF7759L2TRPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 9 |
| Terminal Position | BOTTOM |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRF7759L2TRPBF Datasheet
Download the complete datasheet for Infineon IRF7759L2TRPBF to view detailed technical specifications.
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