N-channel silicon power MOSFET featuring 100V drain-source voltage and 20A continuous drain current. This surface-mount component utilizes DirectFET process technology and is housed in a 15-pin Direct-FET L8 package with no leads. Key electrical characteristics include a maximum drain-source on-resistance of 3.5 mOhm at 10V and a typical gate charge of 200 nC at 10V. Operating temperature range spans from -55°C to 175°C, with a maximum power dissipation of 3300 mW.
PackageDirect-FET L8
MountingSurface Mount
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Technical Specifications
Infineon IRF7769L2TR1PbF technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
Direct-FET L8
Package Description
Metal Can Direct FET Package
Lead Shape
No Lead
Pin Count
15
PCB
15
Package Length (mm)
7.1(Max)
Package Width (mm)
9.15(Max)
Package Height (mm)
0.49(Max)
Seated Plane Height (mm)
0.74(Max)
Package Material
Copper
Mounting
Surface Mount
Configuration
Single Hex Drain Octal Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
DirectFET
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
20A
Material
Si
Maximum Drain Source Resistance
3.5@10VmOhm
Typical Gate Charge @ Vgs
200@10VnC
Typical Gate Charge @ 10V
200nC
Typical Input Capacitance @ Vds
11560@25VpF
Maximum Power Dissipation
3300mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Infineon IRF7769L2TR1PbF Datasheet
Download the complete datasheet for Infineon IRF7769L2TR1PbF to view detailed technical specifications.
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