N-Channel Power MOSFET featuring 11A continuous drain current (I(D)) and a 150V drain-source voltage (V(DS)). This silicon Metal-Oxide Semiconductor FET offers a low on-resistance of 0.0011 ohms. Designed with a single element and nine terminals, it boasts a maximum operating temperature of 175°C. The component is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Infineon IRF7779L2TRPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
9
Terminal Position
BOTTOM
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF7779L2TRPBF Datasheet
Download the complete datasheet for Infineon IRF7779L2TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.