N-channel Power MOSFET with 250V drain-source voltage and 6.6A continuous drain current. Features a 15-pin Direct-FET L8 surface-mount package with a copper metal can construction. Offers low drain-source on-resistance of 38mOhm at 10V and a maximum power dissipation of 4300mW. Operates across a wide temperature range from -55°C to 175°C.
PackageDirect-FET L8
MountingSurface Mount
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Technical Specifications
Infineon IRF7799L2TR1PbF technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package/Case
Direct-FET L8
Package Description
Metal Can Direct FET Package
Lead Shape
No Lead
Pin Count
15
PCB
15
Package Length (mm)
7.1(Max)
Package Width (mm)
9.15(Max)
Package Height (mm)
0.49(Max)
Seated Plane Height (mm)
0.74(Max)
Package Material
Copper
Mounting
Surface Mount
Configuration
Single Hex Drain Octal Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
DirectFET
Maximum Drain Source Voltage
250V
Maximum Gate Source Voltage
±30V
Maximum Continuous Drain Current
6.6A
Material
Si
Maximum Gate Threshold Voltage
5V
Maximum Drain Source Resistance
38@10VmOhm
Typical Gate Charge @ Vgs
110@10VnC
Typical Gate Charge @ 10V
110nC
Typical Input Capacitance @ Vds
6714@25VpF
Maximum Power Dissipation
4300mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
Datasheet
Infineon IRF7799L2TR1PbF Datasheet
Download the complete datasheet for Infineon IRF7799L2TR1PbF to view detailed technical specifications.
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