N-channel Power MOSFET, Si, 250V Drain-Source Voltage, 6.6A Continuous Drain Current. Features DirectFET L8 package, 15-pin Surface Mount configuration with Copper material and No Lead. Offers 38mOhm maximum Drain-Source Resistance at 10V, 110nC typical Gate Charge, and 6714pF typical Input Capacitance. Operates from -55°C to 175°C with 4300mW maximum power dissipation.
PackageDirect-FET L8
MountingSurface Mount
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Technical Specifications
Infineon IRF7799L2TRPbF technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | Direct-FET L8 |
| Package Description | Metal Can Direct FET Package |
| Lead Shape | No Lead |
| Pin Count | 15 |
| PCB | 15 |
| Package Length (mm) | 7.1(Max) |
| Package Width (mm) | 9.15(Max) |
| Package Height (mm) | 0.49(Max) |
| Seated Plane Height (mm) | 0.74(Max) |
| Package Material | Copper |
| Mounting | Surface Mount |
| Configuration | Single Hex Drain Octal Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | DirectFET |
| Maximum Drain Source Voltage | 250V |
| Maximum Gate Source Voltage | ±30V |
| Maximum Continuous Drain Current | 6.6A |
| Material | Si |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Drain Source Resistance | 38@10VmOhm |
| Typical Gate Charge @ Vgs | 110@10VnC |
| Typical Gate Charge @ 10V | 110nC |
| Typical Input Capacitance @ Vds | 6714@25VpF |
| Maximum Power Dissipation | 4300mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 175°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes with Exemption |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IRF7799L2TRPbF Datasheet
Download the complete datasheet for Infineon IRF7799L2TRPbF to view detailed technical specifications.
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