N-channel silicon Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) designed for small signal applications. Features a 40V drain-source voltage rating and a continuous drain current capability of 18A. This single-element device is housed in an 8-terminal SOP-8 package conforming to the MS-012AA JEDEC standard. Operates up to a maximum temperature of 150°C.
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Technical Specifications
Infineon IRF7842TRPBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
8
Terminal Position
DUAL
JEDEC Package Code
MS-012AA
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF7842TRPBF Datasheet
Download the complete datasheet for Infineon IRF7842TRPBF to view detailed technical specifications.
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