Dual N-channel enhancement mode power MOSFET featuring 30V drain-source voltage and 6.2A continuous drain current. This surface-mount device is housed in an 8-pin SOIC (Small Outline IC) package with gull-wing leads, measuring 5mm x 4mm x 1.5mm. Key electrical characteristics include a maximum drain-source on-resistance of 38mΩ (Q1) and 32mΩ (Q2) at 4.5V Vgs, with typical gate charge values of 7.6nC (Q1) and 15.5nC (Q2) at 5V Vgs. Operating temperature range spans from -55°C to 150°C.
PackageSOIC
MountingSurface Mount
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Technical Specifications
Infineon IRF7901D1GPbF technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOP |
| Package/Case | SOIC |
| Package Description | Small Outline IC |
| Lead Shape | Gull-wing |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5(Max) |
| Package Width (mm) | 4(Max) |
| Package Height (mm) | 1.5(Max) |
| Seated Plane Height (mm) | 1.75(Max) |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | MS-012AA |
| Configuration | Dual |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 2 |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 6.2A |
| Maximum Drain Source Resistance | [email protected]@Q 1|[email protected]@Q 2mOhm |
| Typical Gate Charge @ Vgs | 7.6@5V@Q 1|15.5@5V@Q 2nC |
| Typical Input Capacitance @ Vds | 780@16V@Q 1|1810@16V@Q 2pF |
| Maximum Power Dissipation | 2000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Infineon IRF7901D1GPbF Datasheet
Download the complete datasheet for Infineon IRF7901D1GPbF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.