N-channel Power MOSFET featuring a 40V drain-source voltage and 198A continuous drain current. This single-element, enhancement-mode silicon MOSFET utilizes DirectFET process technology. It is housed in a 7-pin Direct-FET MX package with lead-frame SMT mounting, offering a low profile with maximum dimensions of 5.45mm x 5.05mm x 0.53mm. Key electrical characteristics include a maximum gate-source voltage of ±20V and a low drain-source on-resistance of 1.4 mOhm at 10V.
PackageDirect-FET MX
MountingSurface Mount
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Technical Specifications
Infineon IRF7946TR1PBF technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package/Case | Direct-FET MX |
| Package Description | Metal Can Direct FET Package |
| Lead Shape | No Lead |
| Pin Count | 7 |
| PCB | 7 |
| Package Length (mm) | 5.45(Max) |
| Package Width (mm) | 5.05(Max) |
| Package Height (mm) | 0.53(Max) |
| Seated Plane Height (mm) | 0.7(Max) |
| Package Material | Copper |
| Mounting | Surface Mount |
| Configuration | Single |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | DirectFET |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 198A |
| Material | Si |
| Maximum Gate Threshold Voltage | 3.9V |
| Maximum Drain Source Resistance | 1.4@10VmOhm |
| Typical Gate Charge @ Vgs | 141@10VnC |
| Typical Gate Charge @ 10V | 141nC |
| Typical Input Capacitance @ Vds | 6852@25VpF |
| Maximum Power Dissipation | 96000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Infineon IRF7946TR1PBF Datasheet
Download the complete datasheet for Infineon IRF7946TR1PBF to view detailed technical specifications.
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