Infineon
IRF9910
Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
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Technical Specifications
Infineon IRF9910 technical specifications.
General
Number of Terminals
8
Terminal Position
DUAL
JEDEC Package Code
MS-012AA
Number of Elements
2
Compliance
RoHS
Yes
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF9910 Datasheet
Download the complete datasheet for Infineon IRF9910 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.