Infineon
IRF9953PBF
Power Field-Effect Transistor, 2.3A I(D), 30V, 0.25ohm, 2-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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Technical Specifications
Infineon IRF9953PBF technical specifications.
General
Max Operating Temperature
150
Number of Terminals
8
Terminal Position
DUAL
JEDEC Package Code
MS-012AA
Number of Elements
2
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Infineon IRF9953PBF Datasheet
Download the complete datasheet for Infineon IRF9953PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.