Infineon
IRF9Z24NS
Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
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Technical Specifications
Infineon IRF9Z24NS technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
Number of Elements
1
Compliance
RoHS
No
Eccn Code
EAR99
HTS Code
8541.29.00.95
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRF9Z24NS Datasheet
Download the complete datasheet for Infineon IRF9Z24NS to view detailed technical specifications.
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