N-channel enhancement mode power MOSFET featuring 100V drain-source voltage and 62A continuous drain current. This single-element silicon transistor utilizes HEXFET process technology and is housed in a TO-220AB package with 3 through-hole pins and a tab. Key electrical characteristics include a maximum gate-source voltage of ±20V, a maximum drain-source on-resistance of 13.5 mOhm at 10V, and a typical input capacitance of 3180pF at 50V. Operating temperature range spans from -55°C to 175°C, with a maximum power dissipation of 140W.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Infineon IRFB4510PBF technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.67(Max)
Package Width (mm)
4.83(Max)
Package Height (mm)
9.02(Max)
Seated Plane Height (mm)
20.57(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
62A
Material
Si
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
13.5@10VmOhm
Typical Gate Charge @ Vgs
58@10VnC
Typical Gate Charge @ 10V
58nC
Typical Input Capacitance @ Vds
3180@50VpF
Maximum Power Dissipation
140000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRFB4510PBF Datasheet
Download the complete datasheet for Infineon IRFB4510PBF to view detailed technical specifications.
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