N-channel enhancement mode power MOSFET featuring 40V drain-source voltage and 123A continuous drain current. This single element silicon transistor utilizes HEXFET process technology and is housed in a TO-220AB package with 3 through-hole pins and a tab. Key specifications include a maximum drain-source on-resistance of 3.3 mOhm at 10V, typical gate charge of 62 nC, and a maximum power dissipation of 99W. Operating temperature range is -55°C to 175°C.
PackageTO-220AB
MountingThrough Hole
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Technical Specifications
Infineon IRFB7446PBF technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.67(Max)
Package Width (mm)
4.83(Max)
Package Height (mm)
9.02(Max)
Seated Plane Height (mm)
20.57(Max)
Pin Pitch (mm)
2.54
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
40V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
123A
Material
Si
Maximum Gate Threshold Voltage
3.9V
Maximum Drain Source Resistance
3.3@10VmOhm
Typical Gate Charge @ Vgs
62@10VnC
Typical Gate Charge @ 10V
62nC
Typical Input Capacitance @ Vds
3183@25VpF
Maximum Power Dissipation
99000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRFB7446PBF Datasheet
Download the complete datasheet for Infineon IRFB7446PBF to view detailed technical specifications.
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