Infineon
IRFG110
Power Field-Effect Transistor, 1A I(D), 100V, 0.8ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB, HERMETIC SEALED PACKAGE-14
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Technical Specifications
Infineon IRFG110 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 14 |
| Terminal Position | DUAL |
| JEDEC Package Code | MO-036AB |
| Number of Elements | 4 |
Compliance
| RoHS | No |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFG110 Datasheet
Download the complete datasheet for Infineon IRFG110 to view detailed technical specifications.
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