N-channel silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) designed for power applications. Features a continuous drain current (I(D)) of 21A and a drain-source voltage (V(DS)) of 60V. Offers a low on-resistance of 0.0041 ohms. Operates across a temperature range of -55°C to 150°C. This single-element device is housed in a 5-terminal, 6x5mm plastic QFN package, compliant with halogen-free and RoHS standards.
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Technical Specifications
Infineon IRFH5006TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 5 |
| Min Operating Temperature | -55 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFH5006TRPBF Datasheet
Download the complete datasheet for Infineon IRFH5006TRPBF to view detailed technical specifications.
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