IRFH5010TRPBF

N-channel silicon MOSFET featuring 100V drain-source voltage and 13A continuous drain current. This single-element Metal-Oxide-Semiconductor FET offers a low on-resistance of 0.009 ohms. Designed for high-power applications, it operates up to a maximum temperature of 150°C. The component is housed in a 6 x 5 mm plastic QFN-8 package with 5 terminals, ensuring halogen-free and RoHS compliance.