N-channel Power MOSFET featuring HEXFET process technology. This single element transistor operates in enhancement mode with a maximum drain-source voltage of 200V and a continuous drain current of 5.1A. It offers a low drain-source on-resistance of 55mOhm at 10V. The component is housed in an 8-pin PQFN EP surface-mount package with dimensions of 5mm x 6mm x 0.81mm. Operating temperature range is -55°C to 150°C.
PackagePQFN EP
MountingSurface Mount
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Technical Specifications
Infineon IRFH5020PbF technical specifications.
General
| Package Family Name | QFN |
| Package/Case | PQFN EP |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.81 |
| Seated Plane Height (mm) | 0.83 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 200V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 5.1A |
| Maximum Drain Source Resistance | 55@10VmOhm |
| Typical Gate Charge @ Vgs | 36@10VnC |
| Typical Gate Charge @ 10V | 36nC |
| Typical Input Capacitance @ Vds | 2290@100VpF |
| Maximum Power Dissipation | 3600mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Infineon IRFH5020PbF Datasheet
Download the complete datasheet for Infineon IRFH5020PbF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.