N-channel power MOSFET featuring 100V drain-source voltage and 9.3A continuous drain current. This silicon, metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.018 ohms. Designed with a single element and 3 terminals in a dual position configuration, it operates up to a maximum temperature of 150°C. The component is HALOGEN FREE and ROHS COMPLIANT, housed in a plastic QFN-8 package.
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Technical Specifications
Infineon IRFH5053TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 3 |
| Terminal Position | DUAL |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFH5053TRPBF Datasheet
Download the complete datasheet for Infineon IRFH5053TRPBF to view detailed technical specifications.
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