N-channel Power MOSFET featuring 30V drain-source voltage and 15A continuous drain current. This surface-mount component utilizes HEXFET process technology and is housed in an 8-pin PQFN package with dimensions of 5mm x 6mm x 0.95mm. Key electrical characteristics include a maximum drain-source on-resistance of 8.1 mOhm at 10V and a typical gate charge of 7.8 nC at 4.5V. Operating temperature range spans from -55°C to 150°C.
PackagePQFN
MountingSurface Mount
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Technical Specifications
Infineon IRFH5306PbF technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
QFN
Package/Case
PQFN
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
5
Package Width (mm)
6
Package Height (mm)
0.95(Max)
Seated Plane Height (mm)
1(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
15A
Maximum Gate Threshold Voltage
2.35V
Maximum Drain Source Resistance
8.1@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
1125@15VpF
Maximum Power Dissipation
3600mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
230pF
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU
Datasheet
Infineon IRFH5306PbF Datasheet
Download the complete datasheet for Infineon IRFH5306PbF to view detailed technical specifications.
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