N-channel Power MOSFET featuring 30V drain-source voltage and 15A continuous drain current. This surface-mount component utilizes HEXFET process technology and is housed in an 8-pin PQFN package with dimensions of 5mm x 6mm x 0.95mm. Key electrical characteristics include a maximum drain-source on-resistance of 8.1 mOhm at 10V and a typical gate charge of 7.8 nC at 4.5V. Operating temperature range spans from -55°C to 150°C.
PackagePQFN
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon IRFH5306PbF technical specifications.
General
| Basic Package Type | Non-Lead-Frame SMT |
| Package Family Name | QFN |
| Package/Case | PQFN |
| Lead Shape | No Lead |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.95(Max) |
| Seated Plane Height (mm) | 1(Max) |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 30V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 15A |
| Maximum Gate Threshold Voltage | 2.35V |
| Maximum Drain Source Resistance | 8.1@10VmOhm |
| Typical Gate Charge @ Vgs | [email protected]nC |
| Typical Input Capacitance @ Vds | 1125@15VpF |
| Maximum Power Dissipation | 3600mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
| Typical Output Capacitance | 230pF |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Infineon IRFH5306PbF Datasheet
Download the complete datasheet for Infineon IRFH5306PbF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.