N-channel Power MOSFET, Si, HEXFET technology, 40V Drain-Source Voltage, 259A Continuous Drain Current. Features 1.4 mOhm Drain-Source Resistance at 10V, 129nC Gate Charge, and 6419pF Input Capacitance. Encased in an 8-pin PQFN EP surface-mount package with dimensions 5x6x0.81mm. Operates from -55°C to 150°C with 156W power dissipation.
PackagePQFN EP
MountingSurface Mount
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Technical Specifications
Infineon IRFH7004TR2PBF technical specifications.
General
| Package Family Name | QFN |
| Package/Case | PQFN EP |
| Pin Count | 8 |
| PCB | 8 |
| Package Length (mm) | 5 |
| Package Width (mm) | 6 |
| Package Height (mm) | 0.81 |
| Seated Plane Height (mm) | 0.83 |
| Pin Pitch (mm) | 1.27 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Configuration | Single Quad Drain Triple Source |
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Number of Elements per Chip | 1 |
| Process Technology | HEXFET |
| Maximum Drain Source Voltage | 40V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Continuous Drain Current | 259A |
| Material | Si |
| Maximum Gate Threshold Voltage | 3.9V |
| Maximum Drain Source Resistance | 1.4@10VmOhm |
| Typical Gate Charge @ Vgs | 129@10VnC |
| Typical Gate Charge @ 10V | 129nC |
| Typical Input Capacitance @ Vds | 6419@25VpF |
| Maximum Power Dissipation | 156000mW |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | CG091 |
| EU RoHS | Yes |
| HTS Code | 8541290095 |
| Schedule B | 8541290080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| RoHS Versions | 2011/65/EU |
Datasheet
Infineon IRFH7004TR2PBF Datasheet
Download the complete datasheet for Infineon IRFH7004TR2PBF to view detailed technical specifications.
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