N-channel enhancement mode power MOSFET featuring HEXFET process technology. This single transistor offers a maximum drain-source voltage of 100V and a continuous drain current of 11A. It is housed in an 8-pin QFN EP package with exposed pad, measuring 4.9mm x 5.75mm x 1.03mm, designed for surface mounting. Key electrical characteristics include a low drain-source on-resistance of 13.5mΩ at 10V and a typical gate charge of 58nC.
PackageQFN EP
MountingSurface Mount
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Technical Specifications
Infineon IRFH7110TRPBF technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
QFN
Package/Case
QFN EP
Package Description
Quad Flat No Lead Package, Exposed Pad
Lead Shape
No Lead
Pin Count
8
PCB
8
Package Length (mm)
4.9
Package Width (mm)
5.75
Package Height (mm)
1.03
Seated Plane Height (mm)
1.03
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Configuration
Single Quad Drain Triple Source
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
HEXFET
Maximum Drain Source Voltage
100V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
11A
Maximum Gate Threshold Voltage
4V
Maximum Drain Source Resistance
13.5@10VmOhm
Typical Gate Charge @ Vgs
58@10VnC
Typical Gate Charge @ 10V
58nC
Typical Input Capacitance @ Vds
3240@25VpF
Maximum Power Dissipation
3600mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IRFH7110TRPBF Datasheet
Download the complete datasheet for Infineon IRFH7110TRPBF to view detailed technical specifications.
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