N-Channel Power MOSFET, 100V drain-source voltage, 3.2A continuous drain current, and 0.115 ohm on-resistance. This single-element silicon Metal-oxide Semiconductor Field-Effect Transistor features a QFN-8 package with 5 terminals and a maximum operating temperature of 150°C.
Infineon IRFHM3911TRPBF technical specifications.
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