IRFHM831TR2PBF

Power Field-Effect Transistor, 14A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, QFN-8

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Infineon IRFHM831TR2PBF technical specifications.

Number of Terminals

Min Operating Temperature

-55

Terminal Position

DUAL

Number of Elements

RoHS

Yes

Eccn Code

EAR99

REACH

Compliant

Military Spec

False

This datasheet cannot be embedded due to technical restrictions.