
N-Channel Power MOSFET featuring a continuous drain current of 75A and a drain-source voltage of 150V. This single-element silicon device offers a low on-resistance of 0.0155 ohms. Encased in a TO-247AC package, it supports a maximum operating temperature of 175°C. The Metal-Oxide Semiconductor FET construction ensures efficient power switching.
Infineon IRFP4321PBF technical specifications.
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