N-channel power MOSFET featuring 60V drain-source voltage and 56A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.0084 ohms. Designed with a single element and two terminals, it is housed in a TO-252AA (DPAK-3) package. Maximum operating temperature reaches 175°C.
Quick Jump:
Technical Specifications
Infineon IRFR1018ETRPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFR1018ETRPBF Datasheet
Download the complete datasheet for Infineon IRFR1018ETRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.