N-Channel Power MOSFET featuring a 100V drain-source voltage and 30A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low on-resistance of 0.039 ohms. Designed with a single element and two terminals, it operates up to a maximum temperature of 175°C. The component is housed in a TO-252AA package, a lead-free plastic DPAK-3.
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Technical Specifications
Infineon IRFR3410TRLPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFR3410TRLPBF Datasheet
Download the complete datasheet for Infineon IRFR3410TRLPBF to view detailed technical specifications.
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