N-Channel Power MOSFET featuring a low on-resistance of 0.009 ohms and a continuous drain current capability of 42A. This silicon Metal-oxide Semiconductor FET operates up to a maximum temperature of 175°C. Designed with a single element and two terminals, it is housed in a TO-252AA package.
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Technical Specifications
Infineon IRFR3504ZTRPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFR3504ZTRPBF Datasheet
Download the complete datasheet for Infineon IRFR3504ZTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.