N-Channel Power MOSFET featuring a low on-resistance of 0.009 ohms and a continuous drain current capability of 42A. This silicon Metal-oxide Semiconductor FET operates up to a maximum temperature of 175°C. Designed with a single element and two terminals, it is housed in a TO-252AA package.
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Technical Specifications
Infineon IRFR3504ZTRPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-252AA
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRFR3504ZTRPBF Datasheet
Download the complete datasheet for Infineon IRFR3504ZTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.