N-channel Power MOSFET featuring 500V drain-source voltage and 6A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 1.3 ohms. Designed with a single element and packaged in a TO-252AA (DPAK-3/2) surface-mount package, it operates up to a maximum temperature of 150°C.
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Technical Specifications
Infineon IRFR825TRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFR825TRPBF Datasheet
Download the complete datasheet for Infineon IRFR825TRPBF to view detailed technical specifications.
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