P-channel power MOSFET with 55V drain-source voltage and 11A continuous drain current. Features a low on-resistance of 0.175 ohms, enabling efficient power switching. This single-element silicon device utilizes a metal-oxide semiconductor field-effect transistor structure. Packaged in a TO-252AA (DPAK-3) surface-mount package, it operates up to a maximum temperature of 150°C.
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Technical Specifications
Infineon IRFR9024NTRLPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFR9024NTRLPBF Datasheet
Download the complete datasheet for Infineon IRFR9024NTRLPBF to view detailed technical specifications.
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