P-channel MOSFET, 55V drain-source voltage, 11A continuous drain current, and 0.175 ohm on-resistance. Features a single element silicon metal-oxide semiconductor field-effect transistor construction. Operates across a temperature range of -55°C to 150°C. Packaged in a TO-252AA (DPAK-3) surface-mount package with lead-free composition.
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Technical Specifications
Infineon IRFR9024NTRPBF technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFR9024NTRPBF Datasheet
Download the complete datasheet for Infineon IRFR9024NTRPBF to view detailed technical specifications.
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