N-channel power MOSFET featuring 60V drain-source voltage and a low on-resistance of 0.0025 ohms. Delivers a continuous drain current of 195A, suitable for high-power applications. This single-element silicon FET utilizes a metal-oxide semiconductor construction for efficient switching. Packaged in a TO-263AB (D2PAK-3) surface-mount configuration, it operates up to a maximum temperature of 175°C.
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Technical Specifications
Infineon IRFS3006TRLPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IRFS3006TRLPBF Datasheet
Download the complete datasheet for Infineon IRFS3006TRLPBF to view detailed technical specifications.
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