N-Channel Power MOSFET featuring 75V drain-source voltage and a continuous drain current of 195A. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.003 ohms. Designed with a single element and housed in a TO-263AB package, it operates up to a maximum temperature of 175°C.
Quick Jump:
Technical Specifications
Infineon IRFS3107TRLPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFS3107TRLPBF Datasheet
Download the complete datasheet for Infineon IRFS3107TRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.