N-Channel Power MOSFET featuring a continuous drain current of 75A and a drain-source voltage of 75V. This silicon Metal-oxide Semiconductor FET offers a low on-resistance of 0.0045 ohms. Designed with a single element and housed in a TO-263AB (D2PAK-3) plastic package, it operates across a wide temperature range from -55°C to 175°C.
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Technical Specifications
Infineon IRFS3207TRLPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRFS3207TRLPBF Datasheet
Download the complete datasheet for Infineon IRFS3207TRLPBF to view detailed technical specifications.
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