N-Channel Power MOSFET featuring a low on-resistance of 0.0058 ohms and a continuous drain current capability of 120A. This silicon Metal-oxide Semiconductor FET operates at a maximum voltage of 75V and is designed for high-power applications. Encased in a TO-263AB (D2PAK-3) package, it offers a maximum operating temperature of 175°C. The single-element transistor has a single terminal position.
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Technical Specifications
Infineon IRFS3307ZTRLPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFS3307ZTRLPBF Datasheet
Download the complete datasheet for Infineon IRFS3307ZTRLPBF to view detailed technical specifications.
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