N-channel power MOSFET featuring 80A continuous drain current and 75V drain-source voltage. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.009ohm. Designed with a single element and packaged in a lead-free, plastic TO-263AB (D2PAK-3) package, it operates up to a maximum temperature of 175°C.
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Technical Specifications
Infineon IRFS3607TRLPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRFS3607TRLPBF Datasheet
Download the complete datasheet for Infineon IRFS3607TRLPBF to view detailed technical specifications.
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