N-channel power MOSFET featuring 80A continuous drain current and 75V drain-source voltage. This silicon, metal-oxide semiconductor FET offers a low on-resistance of 0.009ohm. Designed with a single element and packaged in a lead-free, plastic TO-263AB (D2PAK-3) package, it operates up to a maximum temperature of 175°C.
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Technical Specifications
Infineon IRFS3607TRLPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFS3607TRLPBF Datasheet
Download the complete datasheet for Infineon IRFS3607TRLPBF to view detailed technical specifications.
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