N-channel power MOSFET featuring a continuous drain current of 180A and a maximum drain-source voltage of 100V. This silicon metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.0047 ohms. Designed with a single element and housed in a TO-263AB plastic package, it supports a maximum operating temperature of 175°C.
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Technical Specifications
Infineon IRFS4010TRLPBF technical specifications.
General
Max Operating Temperature
175
Number of Terminals
2
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRFS4010TRLPBF Datasheet
Download the complete datasheet for Infineon IRFS4010TRLPBF to view detailed technical specifications.
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