N-channel silicon power MOSFET featuring a continuous drain current of 62A and a maximum drain-source voltage of 200V. This single-element, metal-oxide semiconductor field-effect transistor offers a low on-resistance of 0.026 ohms. Designed for high-temperature operation up to 175°C, it utilizes a D2PAK-3 package with a single terminal position.
Quick Jump:
Technical Specifications
Infineon IRFS4227TRLPBF technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IRFS4227TRLPBF Datasheet
Download the complete datasheet for Infineon IRFS4227TRLPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.