N-channel, single-element silicon power MOSFET designed for high-current applications. Features a continuous drain current of 45A and a drain-source voltage of 250V. Offers a low on-resistance of 0.048 ohms for efficient power transfer. Packaged in a D2PAK-3 surface-mount configuration with lead-free construction.
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Technical Specifications
Infineon IRFS4229TRLPBF technical specifications.
General
Number of Terminals
2
Terminal Position
SINGLE
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
not_compliant
Military Spec
False
Datasheet
Infineon IRFS4229TRLPBF Datasheet
Download the complete datasheet for Infineon IRFS4229TRLPBF to view detailed technical specifications.
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